- 您现在的位置：买卖IC网 > Sheet目录369 > W971GG8JB-25 (Winbond Electronics)IC DDR2 SDRAM 1GBIT 60WBGA
W971GG8JB
8.2.4
On-Die Termination (ODT)
On-Die Termination (ODT) is a new feature on DDR2 components that allows a DRAM to turn on/off
termination resistance for each DQ, DQS/ DQS , RDQS/ RDQS , and DM signal via the ODT control pin.
The ODT feature is designed to improve signal integrity of the memory channel by allowing the DRAM
controller to independently turn on/off termination resistance for any or all DRAM devices.
The ODT function can be used for all active and standby modes. ODT is turned off and not supported
in Self Refresh mode. (Example timing waveforms refer to 11.2, 11.3 ODT Timing for
Active/Standby/Power Down Mode and 11.4, 11.5 ODT timing mode switch at entering/exiting power
down mode diagram in Chapter 11)
DRAM
Input
Buffer
V DDQ
sw1
Rval1
Rval1
sw1
V SSQ
V DDQ
sw2
Rval2
Rval2
sw2
V SSQ
V DDQ
sw3
Rval3
Rval3
sw3
V SSQ
Input
Pin
Switch (sw1, sw2, sw3) is enabled by ODT pin.
Selection among sw1, sw2, and sw3 is determined by “Rtt (nominal)” in EMR (1).
Termination included on all DQs, DM, DQS, DQS , RDQS, and RDQS pins.
Figure 9 – Functional Representation of ODT
8.2.5
8.2.5.1
ODT related timings
MRS command to ODT update delay
During normal operation the value of the effective termination resistance can be changed with an
EMRS command. The update of the Rtt setting is done between t MOD ,min and t MOD ,max, and CKE
must remain HIGH for the entire duration of t MOD window for proper operation. The timings are shown
in the following timing diagram.
Publication Release Date: Jun. 15, 2012
- 18 -
Revision A02
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
W9725G6IB-25
IC DDR2-800 SDRAM 256MB 84-WBGA
W9725G6JB25I
IC DDR2 SDRAM 256MBIT 84WBGA
W9725G6KB-25I
IC DDR2 SDRAM 256MBIT 84WBGA
W972GG6JB-3I
IC DDR2 SDRAM 2GBITS 84WBGA
W9751G6IB-25
IC DDR2-800 SDRAM 512MB 84-WBGA
W9751G6KB-25
IC DDR2 SDRAM 512MBIT 84WBGA
W9812G6JH-6I
IC SDRAM 128MBIT 54TSOPII
W9816G6IH-6I
IC SDRAM 16MBIT 50TSOPII
相关代理商/技术参数
W9725G6IB-25
功能描述:IC DDR2-800 SDRAM 256MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR)
W9725G6JB
制造商:WINBOND 制造商全称:Winbond 功能描述:4M ? 4 BANKS ? 16 BIT DDR2 SDRAM
W9725G6JB-25
制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:512MB DDRII
W9725G6JB25I
功能描述:IC DDR2 SDRAM 256MBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
W9725G6KB-18
制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W9725G6KB-25
功能描述:IC DDR2 SDRAM 256MBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6
W9725G6KB-25 TR
制造商:Winbond Electronics Corp 功能描述:256M DDR2-800, X16
W9725G6KB25A
制造商:WINBOND 制造商全称:Winbond 功能描述:DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask